features ?high output power: p 1db = 44.5dbm (typ.) ?high gain: g 1db = 9.5db (typ.) ?high pae: add = 38% (typ.) ?low im 3 = -46dbc@po = 33.5dbm ?broad band: 6.4 ~ 7.2ghz ?impedance matched zin/zout = 50 ? ?hermetically sealed package 1 edition 1.2 august 2004 FLM6472-25F c-band internally matched fet item drain-source voltage gate-source voltage total power dissipation storage temperature channel temperature symbol v ds v gs 15 -5 93.7 -65 to +175 175 t c = 25 c v v w c c p t t stg t ch condition unit rating absolute maximum rating (ambient temperature ta=25 c) fujitsu recommends the following conditions for the reliable operation of gaas fets: 1. the drain-source operating voltage (v ds ) should not exceed 10 volts. 2. the forward and reverse gate currents should not exceed 64.0 and -11.2 ma respectively with gate resistance of 25 ? . item saturated drain current transconductance pinch-off voltage gate source breakdown voltage power-added efficiency 3rd order intermodulation distortion output power at 1db g.c.p. power gain at 1db g.c.p. symbol i dss -1015 -10 - -0.5 -1.5 -3.0 -5.0 - - 8.5 9.5 - -38- 43.5 44.5 - v ds = 5v, i ds = 500ma v ds = 5v, i ds = 6500ma v ds = 5v, v gs = 0v i gs = -500 a v ds =10v, i ds = 0.65 i dss (typ.), f = 6.4 ~ 7.2 ghz, z s =z l = 50 ohm f = 7.2 ghz, ? f = 10 mhz 2-tone test p out = 33.5dbm s.c.l. a s v db % -44 -46 - dbc dbm v g m v p v gso p 1db g 1db drain current - 6500 7600 ma i dsr im 3 add gain flatness -- 0.6 db ? g test conditions unit limit typ. max. min. electrical characteristics (ambient temperature ta=25 c) channel to case thermal resistance - 1.4 1.6 c/w r th g.c.p.: gain compression point, s.c.l.: single carrier level case style: ik 10v x i dsr x r th channel temperature rise - - 100 c ? t ch description the FLM6472-25F is a power gaas fet that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. eudyna s stringent quality assurance program assures the highest reliability and consistent performance.
2 FLM6472-25F c-band internally matched fet power derating curve 40 80 100 60 20 0 50 100 150 200 case temperature ( c) total power dissipation (w) output power & im 3 vs. input power v ds =10v f 1 = 7.2 ghz f 2 = 7.21 ghz 2-tone test 22 20 24 26 28 30 input power (s.c.l.) (dbm) s.c.l.: single carrier level 31 33 27 29 35 37 39 25 -55 -50 -45 -40 -35 -30 output power (s.c.l.) (dbm) im 3 p out im 3 (dbc) output power vs. frequency pin=36dbm 34dbm 30dbm 32dbm 6.6 6.4 6.8 7.2 7.0 frequency (ghz) 40 41 42 43 44 45 46 output power (dbm) v ds =10v p 1db output power vs. input power v ds =10v f = 6.8 ghz 27 25 29 31 33 35 37 input power (dbm) 38 40 42 44 46 36 30 45 15 0 output power (dbm) add p out add (%)
3 FLM6472-25F c-band internally matched fet +j250 +j100 +j50 +j25 +j10 0 -j10 -j25 -j50 -j100 -j250 s 11 s 22 180 +90 0 -90 s 21 s 12 0.2 0.1 7.4 7.4 6.6 6.6 scale for |s 12 | 50 ? 25 250 scale for |s 21 | 6.2 ghz 6.2 ghz 6.4 6.4 6.8 6.8 7.0 7.0 7.2 7.2 123 4 7.4 7.4 6.6 6.6 6.2 ghz 6.2 ghz 6.4 6.4 6.8 6.8 7.0 7.0 7.2 7.2 s-parameters v ds = 10v, i ds = 6500ma frequency s11 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 6200 .456 42.1 3.198 -129.2 .057 -169.6 .510 71.7 6300 .444 33.6 3.139 -143.1 .058 179.0 .512 66.4 6400 .426 24.4 3.089 -154.7 .061 167.8 .512 59.8 6500 .397 15.3 3.018 -167.8 .064 156.1 .513 51.4 6600 .358 4.4 3.044 178.4 .069 144.0 .512 41.3 6700 .312 -6.6 3.038 165.6 .071 131.3 .502 28.9 6800 .254 -21.0 3.063 151.7 .076 117.2 .488 14.6 6900 .183 -40.2 3.101 136.9 .079 101.6 .466 -1.8 7000 .114 -77.1 3.148 121.1 .081 84.6 .437 -19.7 7100 .104 -149.7 3.164 105.9 .082 68.7 .401 -37.0 7200 .195 164.3 3.139 88.1 .076 53.1 .354 -55.3 7300 .325 138.9 3.042 69.6 .073 32.7 .298 -74.2 7400 .454 120.5 2.871 50.6 .069 19.4 .238 -93.9
4 FLM6472-25F c-band internally matched fet 4-r 1.3 0.15 (0.051) 0.6 (0.024) 14.9 (0.587) 20.4 0.3 (0.803) 24 0.5 (0.945) 5.5 max. (0.217) 2.4 0.15 (0.094) 0.1 (0.004) 1.4 (0.055) 17.4 0.3 (0.685) 8.0 0.2 (0.315) 2.0 min. (0.079) 2.0 min. (0.079) case style "ik" metal-ceramic hermetic package unit: mm(inches) 1. gate 2. source (flange) 3. drain 1 3 2 eudyna devices inc. products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not put this product into the mouth. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. for further information please contact: eudyna devices usa inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. tel: (408) 232-9500 fax: (408) 428-9111 www.us.eudyna.com eudyna devices europe ltd. network house norreys drive maidenhead, berkshire sl6 4fj united kingdom tel: +44 (0) 1628 504800 fax: +44 (0) 1628 504888 eudyna devices asia pte ltd. hong kong branch rm. 1101, ocean centre, 5 canton rd. tsim sha tsui, kowloon, hong kong tel: +852-2377-0227 fax: +852-2377-3921 eudyna devices inc. sales division 1, kanai-cho, sakae-ku yokohama, 244-0845, japan tel: +81-45-853-8156 fax: +81-45-853-8170 eudyna devices inc. reserves the right to change products and specifications without notice. the information does not convey any license under rights of eudyna devices inc. or others. ? 2004 eudyna devices usa inc. printed in u.s.a.
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